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Theoretical interpretation of the zero-field splitting parameters for Fe3+ ions in wide-band gap semiconductor TlGaSe2 single crystal

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dc.contributor.authorAçıkgöz, Muhammed
dc.contributor.authorGnutek, P.
dc.contributor.authorRudowicz, Czesław
dc.contributor.institutionAçıkgöz, Muhammed, Faculty of Arts and Sciences, Bahçeşehir Üniversitesi, Istanbul, Turkey
dc.contributor.institutionGnutek, P., Institute of Physics, West Pomeranian University of Technology, Szczecin, Szczecin, Poland
dc.contributor.institutionRudowicz, Czesław, Institute of Physics, West Pomeranian University of Technology, Szczecin, Szczecin, Poland
dc.date.accessioned2025-10-05T16:46:54Z
dc.date.issued2010
dc.description.abstractSuperposition model (SPM) calculations are carried out to provide theoretical interpretation of the zero-field splitting (ZFS) parameters and investigate the local environment around the Fe3+ centers in a TlGaSe<inf>2</inf> single crystal. Experimental electron magnetic resonance (EMR) data are analyzed and compared with the ZFS parameter values predicted by SPM based on the orthorhombic approximation of structural data. The results provide an adequate interpretation of the ZFS parameters obtained by fitting EMR spectra and indicate that Fe3+ ions substitute for the Ga 3+ ions in TlGaSe<inf>2</inf> crystal. © 2010 Elsevier Ltd. All rights reserved. © 2011 Elsevier B.V., All rights reserved.
dc.identifier.doi10.1016/j.ssc.2010.06.045
dc.identifier.endpage1613
dc.identifier.issn00381098
dc.identifier.issue35-36
dc.identifier.scopus2-s2.0-77955468646
dc.identifier.startpage1610
dc.identifier.urihttps://doi.org/10.1016/j.ssc.2010.06.045
dc.identifier.urihttps://hdl.handle.net/20.500.14719/13684
dc.identifier.volume150
dc.language.isoen
dc.relation.sourceSolid State Communications
dc.subject.authorkeywordsA. Semiconductors
dc.subject.authorkeywordsC. Point Defects
dc.subject.authorkeywordsD. Crystal And Ligand Fields
dc.subject.authorkeywordsE. Electron Paramagnetic Resonance
dc.subject.authorkeywordsCrystal And Ligand Fields
dc.subject.authorkeywordsD. Crystal And Ligand Fields
dc.subject.authorkeywordsE. Electron Paramagnetic Resonance
dc.subject.authorkeywordsElectron Magnetic Resonance
dc.subject.authorkeywordsLocal Environments
dc.subject.authorkeywordsParameter Values
dc.subject.authorkeywordsStructural Data
dc.subject.authorkeywordsSuperposition Model
dc.subject.authorkeywordsWide-band-gap Semiconductor
dc.subject.authorkeywordsZero-field Splitting Parameters
dc.subject.authorkeywordsZero-field Splittings
dc.subject.authorkeywordsDefects
dc.subject.authorkeywordsElectron Resonance
dc.subject.authorkeywordsIons
dc.subject.authorkeywordsLigands
dc.subject.authorkeywordsParamagnetic Materials
dc.subject.authorkeywordsPoint Defects
dc.subject.authorkeywordsSingle Crystals
dc.subject.authorkeywordsParamagnetic Resonance
dc.subject.indexkeywordsCrystal and ligand fields
dc.subject.indexkeywordsD. Crystal and ligand fields
dc.subject.indexkeywordsE. Electron paramagnetic resonance
dc.subject.indexkeywordsElectron magnetic resonance
dc.subject.indexkeywordsLocal environments
dc.subject.indexkeywordsParameter values
dc.subject.indexkeywordsStructural data
dc.subject.indexkeywordsSuperposition model
dc.subject.indexkeywordsWide-band-gap semiconductor
dc.subject.indexkeywordsZero-field splitting parameters
dc.subject.indexkeywordsZero-field splittings
dc.subject.indexkeywordsDefects
dc.subject.indexkeywordsElectron resonance
dc.subject.indexkeywordsIons
dc.subject.indexkeywordsLigands
dc.subject.indexkeywordsParamagnetic materials
dc.subject.indexkeywordsPoint defects
dc.subject.indexkeywordsSingle crystals
dc.subject.indexkeywordsParamagnetic resonance
dc.titleTheoretical interpretation of the zero-field splitting parameters for Fe3+ ions in wide-band gap semiconductor TlGaSe2 single crystal
dc.typeArticle
dcterms.referencesPanich, Alexander M., Electronic properties and phase transitions in low-dimensional semiconductors, Journal of Physics Condensed Matter, 20, 29, (2008), Mikailov, Faik A., EPR spectra of Fe 3+ centers in layered TlGaSe 2 single crystal, Solid State Communications, 133, 6, pp. 389-392, (2005), Mikailov, Faik A., EPR study of the structural phase transitions in Fe 3+ doped TlInS 2, Physica Status Solidi (A) Applications and Materials Science, 203, 7, pp. 1580-1585, (2006), Açıkgöz, Muhammed, Structural phase transitions in Fe3+ -doped ferroelectric TlGaSe2 crystal, Solid State Communications, 145, 11-12, pp. 539-544, (2008), Açıkgöz, Muhammed, Low temperature EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal, Crystal Research and Technology, 43, 8, pp. 863-868, (2008), Mikailov, Faik A., Twinned EPR spectra of Fe3+ centers in ternary layered TlGaS2 crystal, Solid State Communications, 138, 5, pp. 239-241, (2006), Açıkgöz, Muhammed, Electron paramagnetic resonance (EPR) investigations of iron-doped ferroelectric ternary thallium chalcogenides, Applied Spectroscopy Reviews, 44, 3, pp. 181-209, (2009), Panich, Alexander M., Single-crystal NMR for the layered semiconductor TlGaSe2, Journal of Physics Condensed Matter, 20, 39, (2008), Mustafaeva, Solmaz Nariman, Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS 2 single crystal, Physics of the Solid State, 51, 11, pp. 2269-2273, (2009), Seyidov, Mir Hasan Yu, Effect of the negative chemical pressure on the temperatures of phase transitions in the TlInS2 layered crystal, Physics of the Solid State, 51, 12, pp. 2513-2519, (2009)
dspace.entity.typePublication
local.indexed.atScopus
person.identifier.scopus-author-id14012440900
person.identifier.scopus-author-id22133912200
person.identifier.scopus-author-id7004341283

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