Heat Capacity Anomalies of TlInS2 and TlGaS2 Single Crystals Detected by Differential Scanning Calorimetry (DSC)

Abstract

Specific heat capacity C-p anomalies of layered single crystals TlInS2 and TlGaS2 have been investigated using differential scanning calorimetry (DSC) as a new technique for such crystals. Special features of C-p have been revealed in the temperature range of the possible phase transitions of both crystals. A sequence of maximum values of C-p is obtained at 163, 174, 184, 193, 201, 212, 224, 254, and 259 K for TlInS2. In the case of TlGaS2, the temperatures of the obtained maximum C-p values at 177 and 241 K agree well with the intervals of the phase transition temperatures reported in the published data of TlGaS2. As a result, it is remarked that DSC technique might have a particular potential for the thermal measurements of layered semiconductors.