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Direct modulation response of a 1.55 µm InGaAsp ridge waveguide laser

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dc.contributor.authorÖzyazici, Mustafa Sadettin
dc.contributor.institutionÖzyazici, Mustafa Sadettin, Department of Electrical and Electronic Engineering, Bahçeşehir Üniversitesi, Istanbul, Turkey
dc.date.accessioned2025-10-05T16:23:51Z
dc.date.issued2016
dc.description.abstractThe high frequency direct modulation response and the -3 dB bandwidth of a 1.55 µm InGaAsP ridge waveguide laser are investigated by using a mathematical model based on single-mode rate equations including Auger recombination, nonradiative recombination and gain compression parameters. The effect of each laser parameter on the laser modulation response and the -3 dB bandwidth are determined. It is found that among all parameters the gain compression and Auger recombination are the most effective parameters affecting the direct modulation response and the -3 dB bandwidth. © 2020 Elsevier B.V., All rights reserved.
dc.identifier.endpage618
dc.identifier.issn20653824
dc.identifier.issn18426573
dc.identifier.issue9-Oct
dc.identifier.scopus2-s2.0-85008702030
dc.identifier.startpage616
dc.identifier.urihttps://hdl.handle.net/20.500.14719/12370
dc.identifier.volume10
dc.language.isoen
dc.publisherNational Institute of Optoelectronics
dc.relation.sourceOptoelectronics and Advanced Materials, Rapid Communications
dc.subject.authorkeywordsBandwidth
dc.subject.authorkeywordsDirect Modulation
dc.subject.authorkeywordsRidge Waveguide
dc.subject.authorkeywordsSemiconductor Laser
dc.subject.authorkeywordsArsenic Compounds
dc.subject.authorkeywordsAugers
dc.subject.authorkeywordsBandwidth
dc.subject.authorkeywordsBandwidth Compression
dc.subject.authorkeywordsIii-v Semiconductors
dc.subject.authorkeywordsModulation
dc.subject.authorkeywordsPhosphorus Compounds
dc.subject.authorkeywordsRidge Waveguides
dc.subject.authorkeywordsSemiconductor Alloys
dc.subject.authorkeywordsSemiconductor Lasers
dc.subject.authorkeywordsAuger Recombination
dc.subject.authorkeywordsDirect Modulation
dc.subject.authorkeywordsEffective Parameters
dc.subject.authorkeywordsHigh Frequency Hf
dc.subject.authorkeywordsLaser Parameters
dc.subject.authorkeywordsNon-radiative Recombinations
dc.subject.authorkeywordsRidge Waveguide Lasers
dc.subject.authorkeywordsSingle Mode Rate Equations
dc.subject.authorkeywordsBoron Compounds
dc.subject.indexkeywordsArsenic compounds
dc.subject.indexkeywordsAugers
dc.subject.indexkeywordsBandwidth
dc.subject.indexkeywordsBandwidth compression
dc.subject.indexkeywordsIII-V semiconductors
dc.subject.indexkeywordsModulation
dc.subject.indexkeywordsPhosphorus compounds
dc.subject.indexkeywordsRidge waveguides
dc.subject.indexkeywordsSemiconductor alloys
dc.subject.indexkeywordsSemiconductor lasers
dc.subject.indexkeywordsAuger recombination
dc.subject.indexkeywordsDirect modulation
dc.subject.indexkeywordsEffective parameters
dc.subject.indexkeywordsHigh frequency HF
dc.subject.indexkeywordsLaser parameters
dc.subject.indexkeywordsNon-radiative recombinations
dc.subject.indexkeywordsRidge waveguide lasers
dc.subject.indexkeywordsSingle mode rate equations
dc.subject.indexkeywordsBoron compounds
dc.titleDirect modulation response of a 1.55 µm InGaAsp ridge waveguide laser
dc.typeArticle
dcterms.referencesLlorente, Roberto, Triple-play and 60-GHz radio-over-fiber techniques for next-generation optical access networks, pp. 16-19, (2011), Weisser, Stefan, Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In0.35Ga0.65As-GaAs multiple-quantum-well lasers, IEEE Photonics Technology Letters, 8, 5, pp. 608-610, (1996), Sato, Kenji, Chirp characteristics of 40-Gb/s directly modulated distributed-feedback laser diodes, Journal of Lightwave Technology, 23, 11, pp. 3790-3797, (2005), Lau, Erwin K., Strong optical injection-locked semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz intrinsic bandwidths, Optics Express, 16, 9, pp. 6609-6618, (2008), Solving Ordinary Differential Equations I Nonstiff Problems, (1993), Tucker, Rodney Stuart T., Circuit Modeling of the Effect of Diffusion on Damping in a Narrow-Stripe Semiconductor Laser, IEEE Journal of Quantum Electronics, 19, 7, pp. 1179-1183, (1983), Long Wavelength Semiconductor Lasers, (1986), J Appl Phys, (1982), Int J Optoelectronics, (1989), IEEE J Quant Electron, (1989)
dspace.entity.typePublication
local.indexed.atScopus
person.identifier.scopus-author-id35617667600

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