Heat capacity anomalies of TlInS2 and TlGaS2 single crystals detected by Differential Scanning Calorimetry (DSC)

Abstract

Specific heat capacity C<inf>p</inf> anomalies of layered single crystals TlInS<inf>2</inf> and TlGaS<inf>2</inf> have been investigated using differential scanning calorimetry (DSC) as a new technique for such crystals. Special features of C<inf>p</inf> have been revealed in the temperature range of the possible phase transitions of both crystals. A sequence of maximum values of C<inf>p</inf> is obtained at 163, 174, 184, 193, 201, 212, 224, 254, and 259 K for TlInS<inf>2</inf>. In the case of TlGaS<inf>2</inf>, the temperatures of the obtained maximum C<inf>p</inf> values at 177 and 241 K agree well with the intervals of the phase transition temperatures reported in the published data of TlGaS<inf>2</inf>. As a result, it is remarked that DSC technique might have a particular potential for the thermal measurements of layered semiconductors. © TÜBİTAK. © 2008 Elsevier B.V., All rights reserved.