Metal oxides in electronics

Abstract

As the silicon-based electronics approaching their maximum limit in terms of integrated chip complexity according to Moore’s law, researchers started to investigate the possibility of emerging new materials and even new methods in building electronic devices. Metal oxides (MOs) are deemed a major element in the development and building of many nanoelectronic devices due to their extraordinary electrical, physical, and chemical properties that are different from metals, semiconductors, and insulators. The rapid evolutions in synthesizing MOs and using them in electronic devices open new horizons in improving the performance and functionality of these devices. This article examines and evaluates the latest trends and progress in synthesizing, designing and building MO-based electronic devices, including thin-film transistors, field-effect transistors, diodes, and photodetectors. © 2022 Elsevier B.V., All rights reserved.